Process for manufacturing semiconductor bicmos device

• Main Authors: CHIU, TZU-YIN, POSSANZA, WILLIAM A, ERCEG, FRANK MICHAEL, LIU, TE-YIN MARK, SUNG, JANMYE, KRAFTY, FRANCIS ANTHONY
• Format: Patent
• Language: English; French; German
• Published: 20.12.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

Devices are formed in selected substrate areas by: forming stacked device structures including a first poly Si layer (43); adding second poly Si (81) over the substrate and stacks; removing portions to form isolated devices; adding a barrier layer (102); adding a photoresist layer (200); forming an isolation mask (230) except over those areas where the second poly overlaps the first and areas within about 1.5 micron of the overlapping areas; etching back the barrier layer over the overlap area; and etching back the first poly layer which overlaps the second.