Integrated semiconductor diode

A diode integrated on semiconductor material with BCD technology and of the type provided on a bulk (2) having a first type of conductivity inside a retention region (8) having a second type of conductivity. The diode comprises also a buried anode region (4) having a first type of conductivity and a...

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Bibliographic Details
Main Authors GALBIATI, PAOLA, MASTROMATTEO, UBALDO
Format Patent
LanguageEnglish
French
German
Published 06.12.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A diode integrated on semiconductor material with BCD technology and of the type provided on a bulk (2) having a first type of conductivity inside a retention region (8) having a second type of conductivity. The diode comprises also a buried anode region (4) having a first type of conductivity and a cathode region (12) having a second type of conductivity. Said cathode region (12) comprises an epitaxial layer (6) located above the buried anode region (4) and a high dope region (11) provided inside the epitaxial layer (6). The buried anode region (4) comprises depressions (5) opposite which is located the high dope region (11) with said depressions (5) being achieved by the intersection of lateral diffusions of distinct and adjacent portions of the buried anode region (4).
Bibliography:Application Number: EP19940830266