Reverse conducting GTO thyristor and manufacturing method for the same

To prevent a reverse conducting GTO thyristor from oozing off carriers from a diode part (14) into a GTO thyristor part (13), and to prevent the GTO thyristor part from false firing, and the false firing withstand capability of the reverse conducting GTO thyristor is improved by setting the lifetime...

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Bibliographic Details
Main Author KAKIKI, HIDEAKI
Format Patent
LanguageEnglish
French
German
Published 06.12.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To prevent a reverse conducting GTO thyristor from oozing off carriers from a diode part (14) into a GTO thyristor part (13), and to prevent the GTO thyristor part from false firing, and the false firing withstand capability of the reverse conducting GTO thyristor is improved by setting the lifetime of an isolation region shorter (15) than those of the GTO thyristor part and the diode part. Setting the lifetime of the isolation region which isolates the GTO thyristor part from the diode part is performed by gold or platinum diffusion, by electron beam irradiation, or by a combination of gold or platinum diffusion and electron beam irradiation.
Bibliography:Application Number: EP19950303619