Mos/bipolar device

An integrated device is provided which has a bipolar transistor as an output stage. The bipolar transistor is driven by a short channel metal oxide semiconductor field effect transistor. Such a device has a low on state voltage drop substantially irrespective of the potential supported by the device...

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Bibliographic Details
Main Authors FINNEY, ADRIAN DR, CASEY, DAVID NEIL DR
Format Patent
LanguageEnglish
French
German
Published 26.04.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated device is provided which has a bipolar transistor as an output stage. The bipolar transistor is driven by a short channel metal oxide semiconductor field effect transistor. Such a device has a low on state voltage drop substantially irrespective of the potential supported by the device.
Bibliography:Application Number: EP19940306993