Four layer overvoltage protection diode

An overvoltage protection device having multiple shorting dots (66) in the emitter region and multiple buried regions (72) substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the overshoot voltage value of the device...

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Bibliographic Details
Main Authors TURNER, ELMER L, WEBB, MONTY F
Format Patent
LanguageEnglish
French
German
Published 29.03.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An overvoltage protection device having multiple shorting dots (66) in the emitter region and multiple buried regions (72) substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the overshoot voltage value of the device while maintaining the high surge capacities of the device. Further, doping types and concentrations have been modified from that known in the prior art to reduce overshoot providing a more accurate and sensitive overvoltage protection device than that known previously in the prior art. The emitter regions (68) are preferably p<+><+> doped, the upper base (70) is n<+> doped, the mid-region layer (74) is p-doped, with the burred regions (72) being p<+> doped, the lower base region (76) is n<+> doped and contains a "getter" region (78) of higher doping to reduce the leakage current.
Bibliography:Application Number: EP19940250188