MULTILAYER ELECTRODES FOR FERROELECTRIC DEVICES

A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuOx, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate (PZT) is deposited on the bottom electrode, and a conducting interlayer is formed at...

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Bibliographic Details
Main Authors YOO, IN, K, VIJAY, DILIP, P, DESU, SESHU, B, KWOK, CHI, K
Format Patent
LanguageEnglish
French
German
Published 01.02.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CABLES
CONDUCTORS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
INSULATORS
PHYSICS
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuOx, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate (PZT) is deposited on the bottom electrode, and a conducting interlayer is formed at the interface between the ferroelectric and the electrode. This interlayer is created by reaction between the materials of the ferroelectric and electrode, and in this case would be Pb2Ru2O7-x. A conductive top layer is deposited over the ferroelectric. This top layer may be a metal, or it may be the same type of materials as the bottom electrode, in which case another interlayer can be formed at the interface. A device constructed in this manner has the property of lower degradation due to fatigue, breakdown, and aging.
Bibliography:Application Number: EP19930909300