Semiconductor device with contact structure and method of manufacturing the same

A semiconductor device with a contact structure includes a silicon substrate (21), a diffusion region (28) formed in a surface of the silicon substrate, a silicide film (29c) of high melting point metal deposited on the diffusion region, an insulating film (30) formed on the silicon substrate, a con...

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Main Authors KOMIYA TAKAYUKI C O KAWASAKI S, YAMAMOTO HIROSHI C O KAWASAKI, OHTA TOMOHIRO C O KAWASAKI STE, SHINRIKI HIROSHI C O KAWASAKI, TAKEYASU NOBUYUKI C O KAWASAKI
Format Patent
LanguageEnglish
French
German
Published 07.06.1995
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device with a contact structure includes a silicon substrate (21), a diffusion region (28) formed in a surface of the silicon substrate, a silicide film (29c) of high melting point metal deposited on the diffusion region, an insulating film (30) formed on the silicon substrate, a contact hole (31) formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film (35) formed on the exposed surface of the silicide film at the bottom of the contact film, a plug (32) formed in the contact hole by selective Al CVD, and a metal wiring (33) formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.
Bibliography:Application Number: EP19940304660