Elimination of local loading effect in dielectric planarization

Local loading effects are reduced in a planarizing etchback of a dielectric layer by using a plasma comprising SF6.

Saved in:

Bibliographic Details
Main Authors	ALUGBIN, DAYO, OLASUPO, KOLAWOLE RAHMAN, MARTIN, EDWARD PAUL, KORNBLIT, AVINOAM
Format	Patent
Language	English French German
Published	27.07.1994
Edition	5
Subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online Access	Get full text

Loading…

More Information
Summary:	Local loading effects are reduced in a planarizing etchback of a dielectric layer by using a plasma comprising SF6.
Bibliography:	Application Number: EP19930310123