Method for integrated circuit fabrication including linewidth control during etching

Pattern transfer from a resist to an underlying layer is accomplished by etching the resist in a plasma comprising hydrogen bromide and oxygen.

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Bibliographic Details
Main Authors KOOK, TAEHO, OLASUPO, KOLAWOLE RAHMAN, KORNBILT, AVINOAM
Format Patent
LanguageEnglish
French
German
Published 06.07.1994
Edition5
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
CINEMATOGRAPHY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
MATERIALS THEREFOR
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Pattern transfer from a resist to an underlying layer is accomplished by etching the resist in a plasma comprising hydrogen bromide and oxygen.
Bibliography:Application Number: EP19930309855