OXIDES AND NITRIDES OF METASTABILE GROUP IV ALLOYS AND NITRIDES OF GROUP IV ELEMENTS AND SEMICONDUCTOR DEVICES FORMED THEREOF

A process and resultant devices is described for forming MOSFET, CMOS and BICMOS devices of Group IV alloys, in particular SixGe1-x wherein 0<x<1, using ion beam oxidation (IBO) or ion beam nitridation (IBN) by CIMD to form insulators of the Group IV alloys.

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Bibliographic Details
Main Authors HELLMAN, OLOF, C, HERBOTS, NICOLE, VANCAUWENBERGHE, OLIVIER, P., J
Format Patent
LanguageEnglish
French
German
Published 16.07.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process and resultant devices is described for forming MOSFET, CMOS and BICMOS devices of Group IV alloys, in particular SixGe1-x wherein 0<x<1, using ion beam oxidation (IBO) or ion beam nitridation (IBN) by CIMD to form insulators of the Group IV alloys.
Bibliography:Application Number: EP19920912188