Reflection-type photoelectric surface and photomultiplier

The photocathode according to this invention is characterized in that an aluminium thin film (2) is formed on a substrate (1), and then an antimony thin layer (3) is deposited directly on the aluminium thin film (2) and is activated by an alkali metal. It is especially preferable that the antimony t...

Full description

Saved in:
Bibliographic Details
Main Authors WASHIYAMI, HIROAKI, IKUMA, TOSHIO, WATASE, YASUSHI
Format Patent
LanguageEnglish
French
German
Published 27.10.1993
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:The photocathode according to this invention is characterized in that an aluminium thin film (2) is formed on a substrate (1), and then an antimony thin layer (3) is deposited directly on the aluminium thin film (2) and is activated by an alkali metal. It is especially preferable that the antimony thin layer (2) is deposited in a thickness of 15 mu g/cm to 45 mu g/cm and is activated by an alkali metal. Such reflection-type photocathode is applicable to photomultipliers. Among functions which are considered to be done by the A film (2), which is in direct contact with the Sb layer (3), a first one is to prevent the alloying between the Sb layer (3) and the substrate (1) (e. g. , Ni) , and a second one is to augment a reflectance of light to be detected.
Bibliography:Application Number: EP19930303053