Method of selectively forming a TiNx layer by MOCVD, on a semi-conductor device

Disclosed is a method that comprises selective deposition of TiNx (13) on III-V compound semiconductor material (11). The TiNx can advantageously be used as contact metal. Exemplarily, deposition is by rapid thermal low pressure (RT-LP) MOCVD using dimethylamidotitanium with H2 carrier gas.

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Bibliographic Details
Main Author KATZ, AVISHAY
Format Patent
LanguageEnglish
French
German
Published 24.09.1997
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:Disclosed is a method that comprises selective deposition of TiNx (13) on III-V compound semiconductor material (11). The TiNx can advantageously be used as contact metal. Exemplarily, deposition is by rapid thermal low pressure (RT-LP) MOCVD using dimethylamidotitanium with H2 carrier gas.
Bibliography:Application Number: EP19920303307