Method of forming electrode pattern

• Main Authors: YUASA, KIMIHIRO, HASHIMOTO, KENJI
• Format: Patent
• Language: English; French; German
• Published: 08.06.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MACHINE TOOLS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-LINEAR OPTICS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PERFORMING OPERATIONS; PHYSICS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; TRANSPORTING; WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OFELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKESTHE PLACE OF A TOOL

A method of forming an electrode pattern in a conductive film covering a surface of a substrate, comprising making a metal electrode for etching contact the conductive film at an area on an exposed surface of the conductive film; and moving the area where the metal electrode for etching contacts the conductive film while a voltage is applied between the metal electrode for etching and the conductive film to remove the conductive film at and in the vicinity of the area where the metal electrode for etching contacts the conductive film and form an electrode pattern in the conductive film; reduces the number of steps in forming an electrode pattern, and the method does not require complicated and expensive apparatuses and enables easy production of fine electrode patterns of large areas.