Method of producing and passivating of semiconductor devices

In a method of forming and passivating device regions in III-V semiconductor substrates, a substrate surface is pretreated in a halogen-carbon plasma prior to depositing of insulating or passivating layers. Devices produced by pretreating the substrate surface have considerably better electrical val...

Full description

Saved in:
Bibliographic Details
Main Authors KUEBART, WOLFGANG, SCHERB, JOACHIM, BOUAYAD-AMINE, JAMAL
Format Patent
LanguageEnglish
French
German
Published 23.04.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:In a method of forming and passivating device regions in III-V semiconductor substrates, a substrate surface is pretreated in a halogen-carbon plasma prior to depositing of insulating or passivating layers. Devices produced by pretreating the substrate surface have considerably better electrical values than devices fabricated without this pretreatment. In particular, devices fabricated with this pretreatment have a low reverse current (dark current).
Bibliography:Application Number: EP19910108781