Thin film semiconductor device

• Main Authors: ISHII, TAKAYUKI, YAMANOBE, MASATO
• Format: Patent
• Language: English; French; German
• Published: 13.03.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A thin film semiconductor device includes a gate electrode (401), a gate insulating layer (402), a thin film semiconductor layer (403), an ohmic layer (406) source and drain electrodes (404,405) and a protective layer (409). The protective layer contains an impurity for controlling conductivity.