Thin film semiconductor device

A thin film semiconductor device includes a gate electrode (401), a gate insulating layer (402), a thin film semiconductor layer (403), an ohmic layer (406) source and drain electrodes (404,405) and a protective layer (409). The protective layer contains an impurity for controlling conductivity.

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Bibliographic Details
Main Authors ISHII, TAKAYUKI, YAMANOBE, MASATO
Format Patent
LanguageEnglish
French
German
Published 13.03.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin film semiconductor device includes a gate electrode (401), a gate insulating layer (402), a thin film semiconductor layer (403), an ohmic layer (406) source and drain electrodes (404,405) and a protective layer (409). The protective layer contains an impurity for controlling conductivity.
Bibliography:Application Number: EP19910302658