Metallization processing

When forming a metallization layer(14), an integrated-circuit semiconductor device fabrication metal such as tungsten, for example, adheres poorly to a dielectric such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer. Processing of the invention prevents s...

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Bibliographic Details
Main Authors SUNG, JANMYE, WONG, YIU MAN, LU, CHIH-YUAN
Format Patent
LanguageEnglish
French
German
Published 03.04.1991
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:When forming a metallization layer(14), an integrated-circuit semiconductor device fabrication metal such as tungsten, for example, adheres poorly to a dielectric such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer. Processing of the invention prevents such flaking by, first removing the dielectric(11) from the back side, edge, and "clip-mark" areas of the wafer and, second, depositing a glue layer(13) on remaining dielectric(11) on the face of the wafer. Removal of dielectric material(11) is by etching in the presence of a protective layer(12) on the face of the wafer.
Bibliography:Application Number: EP19900310382