Method for manufacturing a semiconductor device

A semiconductor device for use in a hybrid LSI circuit is disclosed which comprises MOSFETs and at least two bipolar transistor -- all formed on the same semiconductor substrate. More specifically, P<+>-type buried diffusion layers (66) and P<+>-type buried diffusion layers (68) are form...

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Bibliographic Details
Main Authors MAEDA, TAKEO, HIGASHIZONO, MASAYOSHI
Format Patent
LanguageEnglish
French
German
Published 19.09.1990
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device for use in a hybrid LSI circuit is disclosed which comprises MOSFETs and at least two bipolar transistor -- all formed on the same semiconductor substrate. More specifically, P<+>-type buried diffusion layers (66) and P<+>-type buried diffusion layers (68) are formed on a P-type semiconductor substrate (60). An N-type epitaxial layer (70) is formed on these buried layers (66, 68). N-type well-regions (72a, 72b) and a P-type well-region (74) are formed in the selected portions of the N-type epitaxial layer (70). A P-channel MOSFET and an N-channel MOSFET are formed in the N-type well-region (72a) and the P-type well-region (74), respectively. A first bipolar transistor is formed on the N-type epitaxial layer (70). A second bipolar transistor is formed on the N-type well-region (72b) which has an impurity concentration higher than that of the N-type epitaxial layer (70).
Bibliography:Application Number: EP19900104815