CAPACITIVE REDUCTION OF JUNCTIONS IN A SEMICONDUCTOR DEVICE

The invention is for a metal oxide semiconductor device whose operative speed is increased as a result of the reduction in "bottom wall" capacitance of a junction, which capacitance is achieved without influencing the short channel, punch through characteristics.

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Bibliographic Details
Main Author HASKELL, JACOB D
Format Patent
LanguageEnglish
Published 02.01.1991
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention is for a metal oxide semiconductor device whose operative speed is increased as a result of the reduction in "bottom wall" capacitance of a junction, which capacitance is achieved without influencing the short channel, punch through characteristics.
Bibliography:Application Number: EP19890309263