PROCESS FOR MAKING SINGLE-CRYSTAL MERCURY CADMIUM TELLURIDE LAYERS

Method of making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate (CS), performed inside a reactor (TQ) with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitti...

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Bibliographic Details
Main Author BERNARDI, SERGIO
Format Patent
LanguageEnglish
Published 08.07.1992
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Method of making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate (CS), performed inside a reactor (TQ) with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitting to a specific thermal cycle a weighted tellurium quantity, a saturating cadmium telluride substrate (SS) and a mercury bath (BM).
Bibliography:Application Number: EP19880116463