Epitaxial layers with controlled quantities of nitrogen, grown on silicon substrates and method for producing the same

A description is given of a substrate of semiconductor material for manufacture of semiconductor devices, consisting of a first layer of sylicon single crystal on which at least a second layer of silicon single crystal is grown epitaxially, said second layer containing a quantity of nitrogen compris...

Full description

Saved in:
Bibliographic Details
Main Authors BERETTA, GIORGIO, FERLA, GIUSEPPE
Format Patent
LanguageEnglish
French
German
Published 04.05.1988
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A description is given of a substrate of semiconductor material for manufacture of semiconductor devices, consisting of a first layer of sylicon single crystal on which at least a second layer of silicon single crystal is grown epitaxially, said second layer containing a quantity of nitrogen comprised between 0.5.10 and 10.10 atoms/cm , the result of which is to make available, for subsequent manufacturing stages of the devices, wafers of silicon possessing highly elastic mechanical characteristics and free of lattice defects in the epitaxial layers.
Bibliography:Application Number: EP19870201965