AVALANCHE PHOTODIODE

An avalanche photodiode (1) for detecting light having a wavelength of 1000 nm to 1600 nm and a method of producing it are provided. The avalanche photodiode (1) has a mesa (8) containing the multiplication zone (6) on top of the absorption zone (4), at least the multiplication zone (6) and, benefic...

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Bibliographic Details
Main Author KUEBART WOLFGANG
Format Patent
LanguageEnglish
German
Published 26.07.1989
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An avalanche photodiode (1) for detecting light having a wavelength of 1000 nm to 1600 nm and a method of producing it are provided. The avalanche photodiode (1) has a mesa (8) containing the multiplication zone (6) on top of the absorption zone (4), at least the multiplication zone (6) and, beneficially, layers above it having an overhang (13) with respect to the absorption zone (4). The mushroom-like structure so formed reduces electrical edge breakdowns caused by field overshoot and consequently the inherent noise of the avalanche photodiode.
Bibliography:Application Number: EP19870113301