HIGH VOLTAGE SEMICONDUCTOR INTEGRATED CIRCUIT

This semiconductor integrated circuit has high thickness oxide layers such as to ensure the provision of efficient and reliable high-voltage devices, simultaneously eliminating sharp differences of level on the surface of the circuit in the high density signal processing part. The circuit comprises...

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Bibliographic Details
Main Authors GALBIATI, PAOLA, CONTIERO, CLAUDIO, ANDREINI, ANTONIO
Format Patent
LanguageEnglish
Published 27.01.1988
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This semiconductor integrated circuit has high thickness oxide layers such as to ensure the provision of efficient and reliable high-voltage devices, simultaneously eliminating sharp differences of level on the surface of the circuit in the high density signal processing part. The circuit comprises a semiconductor body defined by a plurality of superimposed layers (40-49) having conductivity of opposite types and at least one oxide insulating layer (50-53) extending over a major surface of the semiconductor body at preset portions thereof, the insulating oxide layer, close to the outer delimiting edges of the preset portions, having a decreasing thickness so as to form peripheral regions (55) sloping towards the semiconductor body major surfaces.
Bibliography:Application Number: EP19870100766