Method for proximity effect correction in electron beam lithography systems

A method for electron beam lithography writing of a micro-miniature pattern P(x, y) in a resist-coated workpiece, the method comprising the steps of calculating, at a plurality of grid points on the workpiece, the electron dosage required to produce uniform exposure of the pattern P in accordance wi...

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Bibliographic Details
Main Author PAVKOVICH, JOHN M
Format Patent
LanguageEnglish
French
German
Published 02.01.1986
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:A method for electron beam lithography writing of a micro-miniature pattern P(x, y) in a resist-coated workpiece, the method comprising the steps of calculating, at a plurality of grid points on the workpiece, the electron dosage required to produce uniform exposure of the pattern P in accordance with the expression where S represents the backscattered exposure distribution produced by an incident electron beam, and A, B and beta b are constants. The pattern is then written on the workpiece with the electron beam while varying the applied electron dosage in accordance with the calculated values of required electron dosage. In a preferred embodiment, the electron dosage applied by the electron beam lithography system is varied between a number of discrete levels. The features of the pattern P are partitioned into subfeatures in accordance with the calculated values of required electron dosage. The subfeatures are then assigned to one of the discrete dosage levels of the system.
Bibliography:Application Number: EP19850303998