SEMICONDUCTOR DEVICE HAVING A DRIVE CIRCUIT ELEMENT AND AN OUTPUT TRANSISTOR

There is a semiconductor device in which an n-type layer (12) formed on a p'-type substrate (10) is divided into first and second device forming regions (12-1, 12-2) by an isolation region (16) and drive circuit devices (TR2, TR3) and an output circuit device are respectively formed in these fi...

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Bibliographic Details
Main Authors KURAMOTO, TSUYOSHI, OHATA, YU
Format Patent
LanguageEnglish
Published 27.05.1987
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is a semiconductor device in which an n-type layer (12) formed on a p'-type substrate (10) is divided into first and second device forming regions (12-1, 12-2) by an isolation region (16) and drive circuit devices (TR2, TR3) and an output circuit device are respectively formed in these first and second device forming regions (12-1, 12-2). The output circuit device (TR1) is a conductivity modulated MOS transistor having the p+-type substrate (10) as a drain and the second device forming region (12-2) as a high resistance region whose conductivity is modulated.
Bibliography:Application Number: EP19850104142