System for transferring a fine pattern onto a target

An X-ray system for transferring a fine pattern onto a target has a mask (12), on the surface (6) of which is formed an X-ray absorbing layer (17) in a predetermined pattern and which is made of a single crystal (2) of high regularity. Parallel mon- ochromic X-rays (4) become incident on the lattice...

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Bibliographic Details
Main Authors SHINOZAKI, TOSHIAKI, TAKASU, SHINICHIRO
Format Patent
LanguageEnglish
French
German
Published 30.06.1982
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Summary:An X-ray system for transferring a fine pattern onto a target has a mask (12), on the surface (6) of which is formed an X-ray absorbing layer (17) in a predetermined pattern and which is made of a single crystal (2) of high regularity. Parallel mon- ochromic X-rays (4) become incident on the lattice plane (h, k, I) of the single crystal (2) at an angle O. Diffraction X-rays (8) emerging from the lattice plane (h, k, I) are projected onto the surface of a wafer (16) in the normal direction. An X-ray resist layer (18) is formed on the surface of the wafer (16). Since incident X-rays (4) and diffraction X-rays (8) are absorbed by the X-ray absorbing layer (17) on the mask (12), the pattern defined by the layer (17) is projected on the X-ray resist layer (18).
Bibliography:Application Number: EP19810305917