System for transferring a fine pattern onto a target
An X-ray system for transferring a fine pattern onto a target has a mask (12), on the surface (6) of which is formed an X-ray absorbing layer (17) in a predetermined pattern and which is made of a single crystal (2) of high regularity. Parallel mon- ochromic X-rays (4) become incident on the lattice...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
30.06.1982
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Subjects | |
Online Access | Get full text |
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Summary: | An X-ray system for transferring a fine pattern onto a target has a mask (12), on the surface (6) of which is formed an X-ray absorbing layer (17) in a predetermined pattern and which is made of a single crystal (2) of high regularity. Parallel mon- ochromic X-rays (4) become incident on the lattice plane (h, k, I) of the single crystal (2) at an angle O. Diffraction X-rays (8) emerging from the lattice plane (h, k, I) are projected onto the surface of a wafer (16) in the normal direction. An X-ray resist layer (18) is formed on the surface of the wafer (16). Since incident X-rays (4) and diffraction X-rays (8) are absorbed by the X-ray absorbing layer (17) on the mask (12), the pattern defined by the layer (17) is projected on the X-ray resist layer (18). |
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Bibliography: | Application Number: EP19810305917 |