Three-terminal semiconductor device

A semiconductor device with performance in the 10<-> second range has an emitter region (1) with a large source of carriers and a low barrier in a thin section (8) whose thickness is less than the length of the mean free path of an electron. This thin section is in contact with a high conducti...

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Bibliographic Details
Main Author HEIBLUM, MORDEHAI
Format Patent
LanguageEnglish
French
German
Published 12.08.1981
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device with performance in the 10<-> second range has an emitter region (1) with a large source of carriers and a low barrier in a thin section (8) whose thickness is less than the length of the mean free path of an electron. This thin section is in contact with a high conductivity base region (2) having a width in the vicinity of the length of the mean free path of an electron providing thereby hot electron transfer to a collector region (3) having a high barrier.
Bibliography:Application Number: EP19810100497