Wandler mit piezoresistivem Dehnungsmessstreifen und Herstellungsverfahren dazu

The sensor has a mono-crystalline material structure (1), such as quartz, used to support at least a stain gauge (2) formed by a semiconductor material, such as silicon, from a chosen liberally doped type. The strain gauge (2) is an element formed on a determined crystallo-graphic plane so as to fav...

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Bibliographic Details
Main Authors DIEM, BERNARD, TOURET, PATRICIA, VIOLLET-BOSSON, SYLVIE
Format Patent
LanguageGerman
Published 13.02.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:The sensor has a mono-crystalline material structure (1), such as quartz, used to support at least a stain gauge (2) formed by a semiconductor material, such as silicon, from a chosen liberally doped type. The strain gauge (2) is an element formed on a determined crystallo-graphic plane so as to favour its co-efficient of piezo-resistivity. The structure (1) is an engraved element upon a determined crystallo-graphic plane favoured for its engraving. The strain gauge (2) is fixed to the structure (1) by adhesive so that the sensor is produced. A dielectric layer supported by the structure (1) and/or the strain gauge (2) separates the strain gauge (2) from the structure (1) forming the support. Both the structure (1) and the strain gauge (2) may be formed from silicon.
Bibliography:Application Number: DE19976013433T