Verfahren zur Substratschadensreduzierung bei PECVD

• Main Authors: KONECNI, ANTHONY JOSEPH, GREWAL, VIRINDER SINGH, FORSTER, JOHN CURT, COTE, DONNA RIZZONE, PODLESNIKAGAN VALENTIN
• Format: Patent
• Language: German
• Published: 24.02.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In a PECVD process, the plasma potential is controlled and maintained at a uniform level to confine the formed plasma to the gap area between the electrodes (13, 14) away from the influence of the walls (12) of the discharge chamber (11). The plasma potential is controlled by operating the system at a high pressure, above about 12 Torr, and monitoring the operation by observing the DC bias on the upper or driven electrode (13) until a positive potential, preferably greater than about 10V, is developed. At this point a symmetrical glow discharge and a controlled plasma exists between the driven electrode (13) and the susceptor electrode (14), controllable by maintaining the pressure between about 14 and 20 Torr, to reduce plasma damage to the semiconductor body (15) being coated which maximizes yield.