VERFAHREN ZUR PLASMA AKTIVIERTEN WÄRMEBEHANDLUNG VON TITANNITRID

A titanium nitride film is annealed at a temperature less than 500 DEG C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatu...

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Bibliographic Details
Main Authors ARORA, RIKHIT, FOSTER, ROBERT, HILLMAN, JOSEPH
Format Patent
LanguageGerman
Published 03.02.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:A titanium nitride film is annealed at a temperature less than 500 DEG C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.
Bibliography:Application Number: DE19966003277T