Nichtflüchtige Halbleiterspeicheranordnung

A non-volatile semiconductor memory device according to the present invention comprises a memory cell array (30) in which a plurality of electrically rewritable memory cells for storing multi-value data representing three or more data, a plurality of bit lines (31), respectively coupled to the plura...

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Bibliographic Details
Main Authors OHUCHI, KAZUNORI, TANAKA, TOMOHARU, HEMINK, GERTJAN
Format Patent
LanguageGerman
Published 27.09.2001
Edition7
Subjects
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