Nichtflüchtige Halbleiterspeicheranordnung
A non-volatile semiconductor memory device according to the present invention comprises a memory cell array (30) in which a plurality of electrically rewritable memory cells for storing multi-value data representing three or more data, a plurality of bit lines (31), respectively coupled to the plura...
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Main Authors | , , |
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Format | Patent |
Language | German |
Published |
27.09.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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