Verfahren zur Bildung einer Dünnschicht auf einem Substrat mittels reaktiven Gleichstrom-Sputtern

• Main Authors: HATANAKA, KATSUYUKI, TSU CITY, MIE PREFECTURE, JP, INABA, HIROSHI, MATSUSAKA CITY, MIE PREFECTURE, JP, NAKASE, KIYOSHI, TAKI-GUN, MIE PREFECTURE, JP, SAITO, TADAHIKO, SHINAGAWA-KU, TOKYO, JP, YAMADA, MASAYUKI, SHINAGAWA-KU, TOKYO, JP, ISHIKAWA, AKIRA, SHINAGAWA-KU, TOKYO, JP
• Format: Patent
• Language: German
• Published: 12.12.1996
• Edition: 6
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of forming a metal oxide film on a substrate by a reactive DC sputtering device with introducing thereinto a reaction gas and an inert gas includes the steps of: (a) regulating a flow rate ratio or a pressure ratio of the reaction gas to the inert gas to not higher than 0.4; (b) increasing a power input to the sputtering device to a first predetermined value such that a discharge voltage increases to a maximum value and then decreases from the maximum value; and (c) decreasing the power input from the first predetermined value to a second predetermined value immediately after the discharge voltage starts to decrease from the maximum value so as to suppress a metal formation on the substrate, the steps (b) and (c) being alternately repeated for a certain period for completing the metal oxide formation on the substrate.