Ionenimplantergerät

• Main Authors: AMEMIYA, KENSUKE, KATSUTA-SHI, JP, HAKAMATA, YOSHIMI, HITACHI-SHI, JP, SAKUDO, NORIYUKI, HITACHI-SHI, JP, TOKIGUCHI, KATSUMI, MITO-SHI, JP
• Format: Patent
• Language: German
• Published: 13.02.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An ion implanting unit includes a magnetic quadrupole lens (2) disposed between the ion source (1) and the RFQ accelerator (3). The magnetic quadrupole lens (2) has a mass spectrometry function and a converging function for reducing the divergence of the beam due to the space charge, to generate a high-energy ion beam in a large current area on the order of several ten milliamperes and implant the ion beam into a material to be processed that is disposed in an ion implanting chamber (4). It is thus possible to utilize to the maximum extent the ion beam extracted from the ion source by the magnetic quadrupole lens and to restrict to the minimum the reduction of the current value during the propagation of the beam, so that a high-energy ion beam can be generated in a large current area.