Bipolartransistor mit isoliertem Gate mit einer hohen Durchbruchspannung

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Bibliographic Details
Main Author KUWAHARA, MASASHI
Format Patent
LanguageGerman
Published 19.06.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Bibliography:Application Number: DE1992617427T