Monolithisch integrierter Mikrowellenverstärker mit hoher Verstärkung

Linear high gain (greater than 20 dB) and high power (greater than +20 dbm) devices for RF power amplifiers are achieved using either fully monolithic or hybridized versions of silicon MMIC two-stage cascaded amplifiers. The device features three feedback loops in conjunction with a DC biasing netwo...

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Bibliographic Details
Main Authors GREEN, RONALD P., WARRINGTON, PA 18976, US, OSIKA, DAVID M., SOMERVILLE, NJ 08876, US
Format Patent
LanguageGerman
Published 20.02.1997
Edition6
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Linear high gain (greater than 20 dB) and high power (greater than +20 dbm) devices for RF power amplifiers are achieved using either fully monolithic or hybridized versions of silicon MMIC two-stage cascaded amplifiers. The device features three feedback loops in conjunction with a DC biasing network. Resistor-capacitor feedback circuits utilize only two capacitiveelements Cblock, Cf6 which are provided as a single three-terminal element having a common lower plate.
Bibliography:Application Number: DE19926014777T