Halbleiterlaser

A semiconductor laser (11) device for radiating a laser beam from a double heterostructure section (13) in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate (12) with a prescribed lattice constant for loading the double hete...

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Main Authors NITTA, KOICHI, YOKOHAMA-SHI, KANAGAWA-KEN, JP, NISHIKAWA, YUKIE, NARASHINO-SHI, CHIBA-KEN, JP, HATAKOSHI, GENICHI, YOKOHAMA-SHI, KANAGAWA-KEN, JP, OKAJIMA, MASAKI, KAWASAKI-SHI, KANAGAWA-KEN, JP, ITAYA, KAZUHIKO, TOKYO, JP
Format Patent
LanguageGerman
Published 13.02.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A semiconductor laser (11) device for radiating a laser beam from a double heterostructure section (13) in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate (12) with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer (14) with a first lattice constant which is 0.5 % to 2.0 % larger than the lattice constant of the substrate (12) in the double heterostructure section (13) for radiating the laser beam, a lattice mismatched cladding layer (17) with a second lattice constant which is 0.2 % to 2.0 % smaller than the lattice constant of the substrate (12) for confining the injected carriers in the active layer (14), and a cladding layer (15) for confining the injected carriers in the active layer (14) by co-operating with the lattice mismatched cladding layer (17).
Bibliography:Application Number: DE19926012938T