Integrierte Schaltungsanordnung mit Abschirmungsvorrichtung und Verfahren zu ihrer Herstellung
An integrated semiconductor circuit (1) includes a substrate (2), an epitaxial layer (3) having transistor base regions (4), a first (5) and a second (11) insulating oxide layer, and a protective layer (13). The first oxide layer carries heavily doped (n<+>) polycrystalline layers, including a...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | German |
Published |
02.11.1995
|
Edition | 6 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!