Integrierte Schaltungsanordnung mit Abschirmungsvorrichtung und Verfahren zu ihrer Herstellung

An integrated semiconductor circuit (1) includes a substrate (2), an epitaxial layer (3) having transistor base regions (4), a first (5) and a second (11) insulating oxide layer, and a protective layer (13). The first oxide layer carries heavily doped (n<+>) polycrystalline layers, including a...

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Bibliographic Details
Main Authors ANDERSSON, BO SIXTEN, S-172 47 SUNDBYBERG, SE, LIND, HANS TOMMY, S-117 39 STOCKHOLM, SE
Format Patent
LanguageGerman
Published 02.11.1995
Edition6
Subjects
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