Integrierte Schaltungsanordnung mit Abschirmungsvorrichtung und Verfahren zu ihrer Herstellung
An integrated semiconductor circuit (1) includes a substrate (2), an epitaxial layer (3) having transistor base regions (4), a first (5) and a second (11) insulating oxide layer, and a protective layer (13). The first oxide layer carries heavily doped (n<+>) polycrystalline layers, including a...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | German |
Published |
02.11.1995
|
Edition | 6 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | An integrated semiconductor circuit (1) includes a substrate (2), an epitaxial layer (3) having transistor base regions (4), a first (5) and a second (11) insulating oxide layer, and a protective layer (13). The first oxide layer carries heavily doped (n<+>) polycrystalline layers, including an electric contact layer (7), a screening layer (8) and a connecting layer (9). The connecting layer (9) electrically connects the screening layer (8) to the epitaxial layer (3), through the electric contact layer (7). The screening layer prevents the occurrence of inversion (+) and parasite components in the epitaxial layer between the base regions (4). The polycrystalline layer arrangement is simple and can be produced in a common process step. The arrangement is able to withstand high temperatures and enables the second insulating layer (11) to be readily applied. |
---|---|
AbstractList | An integrated semiconductor circuit (1) includes a substrate (2), an epitaxial layer (3) having transistor base regions (4), a first (5) and a second (11) insulating oxide layer, and a protective layer (13). The first oxide layer carries heavily doped (n<+>) polycrystalline layers, including an electric contact layer (7), a screening layer (8) and a connecting layer (9). The connecting layer (9) electrically connects the screening layer (8) to the epitaxial layer (3), through the electric contact layer (7). The screening layer prevents the occurrence of inversion (+) and parasite components in the epitaxial layer between the base regions (4). The polycrystalline layer arrangement is simple and can be produced in a common process step. The arrangement is able to withstand high temperatures and enables the second insulating layer (11) to be readily applied. |
Author | LIND, HANS TOMMY, S-117 39 STOCKHOLM, SE ANDERSSON, BO SIXTEN, S-172 47 SUNDBYBERG, SE |
Author_xml | – fullname: ANDERSSON, BO SIXTEN, S-172 47 SUNDBYBERG, SE – fullname: LIND, HANS TOMMY, S-117 39 STOCKHOLM, SE |
BookMark | eNqNyr0KwjAUhuEMOvh3Dwd3QSsUMopW6mxxtMT0tAmkJ-UkdfDqTcELcPpe-J6lmJEnXIjnjSJ2bJEjwl0b5eJIXVDkuaFU0NsIp1fQxnI_PW_PbLWZFIzUwAO5VYaR4DOCTcFQIoeIziWyFvNWuYCb367E9lpU53KHg68xDEojYawvRS4PeykzWVXZ8S_0BePDQLQ |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
Edition | 6 |
ExternalDocumentID | DE69109929TT2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_DE69109929TT23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:26:09 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | German |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_DE69109929TT23 |
Notes | Application Number: DE19916009929T |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951102&DB=EPODOC&CC=DE&NR=69109929T2 |
ParticipantIDs | epo_espacenet_DE69109929TT2 |
PublicationCentury | 1900 |
PublicationDate | 19951102 |
PublicationDateYYYYMMDD | 1995-11-02 |
PublicationDate_xml | – month: 11 year: 1995 text: 19951102 day: 02 |
PublicationDecade | 1990 |
PublicationYear | 1995 |
RelatedCompanies | TELEFONAKTIEBOLAGET L M ERICSSON, STOCKHOLM, SE |
RelatedCompanies_xml | – name: TELEFONAKTIEBOLAGET L M ERICSSON, STOCKHOLM, SE |
Score | 2.4547393 |
Snippet | An integrated semiconductor circuit (1) includes a substrate (2), an epitaxial layer (3) having transistor base regions (4), a first (5) and a second (11)... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Integrierte Schaltungsanordnung mit Abschirmungsvorrichtung und Verfahren zu ihrer Herstellung |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951102&DB=EPODOC&locale=&CC=DE&NR=69109929T2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fS8MwED7GFPVNp6JOJYj0rbilbbo9FHFtxxT2A61jT462SVll60bXKfjXewnb9GlvRxJCEri7L3f5LgD31IjthHO85NQjUzfrSU0PbRHqDMExszltJFxyh7s91nk3X0bWqASfGy6MqhP6rYojokbFqO-FsteLvyCWp95WLh-iFJvmj-3A8TS-poshfKhRzWs5_qDv9V3NdR3P13qvDmvKFBBtBmiu9ySMlnX2_WFLslIW_11K-xj2BzhbVpxAiYsKHLqbn9cqcNBdJ7xRXOve8hQ-nlVlB3RjhSBvscxzo6IuwwyvjxlKZJYW5AnNwCTNZ7Lnay6jexM5iqwyToYiT0L5uo78rEiKQk46EvyJ6RSHnMFd2w_cjo4LHW9PZez52z0F1DiHcjbPxAWQuMnsWkMklhGHpmUZUUJDhn7bimwbwQ67hOqOia529lbhSFG6ZViVXkO5yFfiBp1yEd2q0_wF6rCT7g |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bT8IwFD4haMQ3RY2Kl8aYvS3CLh08LEa2kaHcopPwJNmlCzMwyBia-Os9bQB94u2kbZq2ybmf7xTgXlFDI44idHJqgSZrtbgq-wbzZYrGMTUipR5HHDvc7VH3XXse6aMCfG6wMKJP6LdojogcFSK_50JeL_6CWLaorVw-BAkOzR9bnmlL0RouhuZDVZHspukM-nbfkizLtB2p92rSBk8BKQ0PxfWegS6hcJWGTY5KWfxXKa0j2B_gbml-DIWIlaFkbX5eK8NBd53wRnLNe8sT-GiLzg6oxnJG3kKe50ZGXfopuo8pUmSW5OQJxcAkyWZ85mvOo3sTvoqs0ogMWRb7vLqO_KxIgkRGXG78sekUl5zCXcvxLFfGg463rzK2ne2dPEU9g2I6T9k5kLBBjWqdxboa-pquq0Gs-BT1th4YBho79AIqOza63Dl7CyXX63bGnXbvpQKHAt7NQ6zKFRTzbMWuUUHnwY142V_6jZbY |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Integrierte+Schaltungsanordnung+mit+Abschirmungsvorrichtung+und+Verfahren+zu+ihrer+Herstellung&rft.inventor=ANDERSSON%2C+BO+SIXTEN%2C+S-172+47+SUNDBYBERG%2C+SE&rft.inventor=LIND%2C+HANS+TOMMY%2C+S-117+39+STOCKHOLM%2C+SE&rft.date=1995-11-02&rft.externalDBID=T2&rft.externalDocID=DE69109929TT2 |