Flüssigkristall-Auszeigevorrichtung

In an active matrix type liquid crystal display device which drives liquid crystal by applying voltage via a thin film transistor to each of transparent display electrodes (15) arranged in a matrix form, source buses (19) are each composed of a transparent conductive bus (19A) formed by a transparen...

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Bibliographic Details
Main Authors SUNATA, TOMIHISA, NISHI-KU KOBE-SHI HYOGO, JP, YUKAWA, TEIZO, NISHI-KU KOBE-SHI HYOGO, JP, UKAI, YASUHIRO, KOBE-SHI HYOGO, JP
Format Patent
LanguageGerman
Published 20.07.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:In an active matrix type liquid crystal display device which drives liquid crystal by applying voltage via a thin film transistor to each of transparent display electrodes (15) arranged in a matrix form, source buses (19) are each composed of a transparent conductive bus (19A) formed by a transparent conductive layer extending along each column of the display electrodes (15) and a metal bus (19B) formed by a high melting point metal layer overlapping and extending along the transparent conductive bus (19A). An insulating layer (23) is coated almost all over the surface of a base plate (11) on which the source buses (19) are disposed. The insulating layer has slot-like windows (19D) each extending along one side of each display electrode (15) so that the surface of the corresponding metal bus (19B) is partly exposed. A bus segment (19C) formed by a conductivity metal layer fills each slot-window (19D) to make direct contact with the metal bus (19B). With such a source bus structure in which the high conductivity metal layer and the transparent conductive layer are connected through the high melting point metal layer, the resistance value of the source bus (19) is small and remains stable for a long time.
Bibliography:Application Number: DE19896021049T