MRAM-ZELLE UND SPEICHERARCHITEKTUR MIT MAXIMALEM LESESIGNAL UND REDUZIERTER ELEKTROMAGNETISCHER INTERFERENZ

An MRAM memory is proposed which gives a maximum read-out signal. This is advantageous for high-speed sensing of the MRAM bits. In an MRAM memory with magnetoresistive memory cells linked together to form logically organized rows and columns, It is obtained by, at least during writing, connecting wr...

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Bibliographic Details
Main Authors DITEWIG, M, CUPPENS, ROGER
Format Patent
LanguageGerman
Published 12.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:An MRAM memory is proposed which gives a maximum read-out signal. This is advantageous for high-speed sensing of the MRAM bits. In an MRAM memory with magnetoresistive memory cells linked together to form logically organized rows and columns, It is obtained by, at least during writing, connecting write bitlines of two adjacent rows or columns with each other, so as to write inverse data values in two adjacent memory cells. In this way, a return path for the writing current is provided in a small loop, which enhances EMC behavior.
Bibliography:Application Number: DE20036007459T