Magnetoresistives Element, magnetische Speicherzelle und magnetische Speicheranordnung

The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that...

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Bibliographic Details
Main Authors KAMIJIMA, AKIFUMI, HATATE, HITOSHI
Format Patent
LanguageGerman
Published 07.05.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that the area of a cross section orthogonal to the circumferential direction of a pair of magnetic yokes becomes the smallest in connection parts facing stacked bodies. With the configuration, magnetic flux density of return magnetic fields generated by passing write current to write bit lines and write word lines can be made the highest in the connection parts. Thus, information can be written efficiently and stably.
Bibliography:Application Number: DE20046012813T