Magnetoresistives Element, Magnetspeicherzelle und Magnetspeichervorrichtung

The present invention provides a magnetic memory device capable of performing stable information writing operatio n by efficiently using a magnetic field generated by current flowing in a conductor and stably holding written information. A magnetic memory device includes: magnetic yoke disposed in c...

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Bibliographic Details
Main Author HATATE, HITOSHI
Format Patent
LanguageGerman
Published 06.03.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The present invention provides a magnetic memory device capable of performing stable information writing operatio n by efficiently using a magnetic field generated by current flowing in a conductor and stably holding written information. A magnetic memory device includes: magnetic yoke disposed in correspondence with a region in which a write bit line and a write word line cross each other and constructed so as to surround partially or entirely the periphery of the lines; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field, and magnetically coupled to the magnetic yoke. The second magnetic layer has coercive force larger than that of the magnetic yoke, and coercive force of the magnetic yoke increases toward the second magnetic layer. Thus, the influence by remanent magnetization of the magnetic yoke can be suppressed, and the magnetization direction of the second magnetic layer can be stably held.
Bibliography:Application Number: DE20046007282T