VERFAHREN UND VORRICHTUNG ZUR PLASMABESCHICHTUNG

• Main Author: AKAHORI, TAKASHI
• Format: Patent
• Language: German
• Published: 27.07.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

There is provided a deposition technique wherein the amounts of eliminated F and H are small in the deposition of an insulating film, such as an SiOF film or an SiCHO film, which contains silicon, oxygen and other components and which has a lower dielectric constant than the dielectric constant of a silicon oxide film.A plasma processing system for producing plasma with the energy of a power applied between first and second electrodes which are provided in a vacuum vessel so as to face each other in parallel and which are connected to separate high-frequency power supplies, respectively, is used. An object to be processed, e.g., a semiconductor wafer is mounted on the first electrode. The frequency of the high-frequency power applied to the first electrode is set to be in the range of from 2 MHz to 9 MHz, and the frequency of the high-frequency power applied to the second electrode is set to be 50 MHz or higher, to deposit an insulating film on the wafer.