DYNAMISCHE HALBLEITERSPEICHERANORDNUNG MIT WAHLFREIEM ZUGRIFF

A dynamic random access memory is formed in a silicon chip in arrays of clusters, each of four cells in a single active area. Each active area is cross-shaped with vertical trenches at the four ends of the two crossbars. The central region of the active area where the two crossbars intersect serves...

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Bibliographic Details
Main Authors BUTT, SHAHID, KUNKEL, GERHARD, RADENS, CARL J
Format Patent
LanguageGerman
Published 20.10.2005
Edition7
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A dynamic random access memory is formed in a silicon chip in arrays of clusters, each of four cells in a single active area. Each active area is cross-shaped with vertical trenches at the four ends of the two crossbars. The central region of the active area where the two crossbars intersect serves as the common base region of the four transistors of the cluster. The top of the base region serves as a common drain for the four transistors and each transistor has a separate channel along the wall of its associated vertical trench that provides its storage capacitor. Each cluster includes a common bit line and four separate word-line contacts.
Bibliography:Application Number: DE20016006256T