Resist pattern prodn. esp. for integrated circuits

The prodn. of a resist pattern comprises: (a) coating a semiconductor substrate (1) with a layer of lacquer (2) of a type which is developed with an alkaline developer and which undergoes a chemical change when exposed to light, (b) forming an acid layer (3) on lacquer (2) from an acidic, water-solu...

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Bibliographic Details
Main Author KISHIMURA, SHINJI, ITAMI, HYOGO, JP
Format Patent
LanguageEnglish
German
Published 11.01.1996
Edition6
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The prodn. of a resist pattern comprises: (a) coating a semiconductor substrate (1) with a layer of lacquer (2) of a type which is developed with an alkaline developer and which undergoes a chemical change when exposed to light, (b) forming an acid layer (3) on lacquer (2) from an acidic, water-soluble material (I), to give a transmission factor of at least 70% before and during exposure to light when the layer thickness is 1 micron, and (c) directing light (5) selectively onto layer (2) so as to form an image which is then developed with an alkaline developer to form the resist pattern (7). In a variation of this process, acid layer (3) is removed before exposure to light in stage (c). Also claimed is a water-soluble, acidic mixt. (I) contg. (A) water and a resin with an acidic gp., e.g. COOH or SO3H, or (B) water, a water-soluble resin and a low-mol.wt., acidic organic cpd. such as a carboxylic or sulphonic acid.
Bibliography:Application Number: DE19944443934