Verfahren zur Herstellung einer Dünnschicht-Elektrolumineszenz-Vorrichtung

• Main Authors: SHIBATA, KAZUYOSHI, KAWASAKI, JP, NAKAMATA, SHINICHI, KAWASAKI, JP, TANIGUCHI, HARUTAKA, KAWASAKI, JP, KATOU, HISATO, KAWASAKI, JP, KAWASHIMA, TOMOYUKI, KAWASAKI, JP
• Format: Patent
• Language: German
• Published: 22.12.1994
• Edition: 5
• Subjects: ADHESIVES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for manufacturing a thin-film EL device, wherein a light-emitting layer 4 of the thin-film EL device containing zinc sulphide and manganese added to donate light-emitting centres is grown by a reactive sputtering technique that employs a sputtering gas containing a sulphur compound, is characterised in that the target used contains zinc and less than 0.5 weight percent of manganese contained at least in a surface layer thereof. The present method employs a Zn-Mn target that contains less Mn than the optimum Mn concentration on the basis of the finding that the light-emitting layer grown by the sputtering method contains more Mn than in the target. Manganese concentration on the target surface layer is controlled by changing the area ratio between ZnS and Mn exposed on the surface of the target. Manganese concentration on the target surface is controlled at preferably from 0.3 to 0.4% by weight when the target surface is sulphurized during sputtering and less than 0.1% by weight when the target surface is not sulphurized.