Implanting deep buried impurity zone in semiconductor and resist compsn

• Main Author: KISHIMURA, SHINJI, ITAMI, HYOGO
• Format: Patent
• Language: English; German
• Published: 30.06.1994
• Edition: 5
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS; THEIR PREPARATION OR CHEMICAL WORKING-UP

Formation of a deep buried impurity zone (I) in a semiconductor substrate (II) comprises (a) forming a resist film (III), at least 3 microns thick, on (II); (b) selectively exposing (III) to produce an image; (c) baking (III) at 110-130 deg.C after exposure and before development; (d) developing and then washing (III) to develop a resist pattern (IV); (e) baking (IV) at 100-130 deg.C; (f) implanting impurity ions with great energy into the main surface of (II), using (IV) as mask, to form (I); and (g) removing (IV).