Method and device for driving gate turn-off power semiconductors of a resonant converter at a matched switching speed

• Main Authors: BRUCKMANN, MANFRED., 90475 NUERNBERG, DE, FISCHER, GERHARD., 91052 ERLANGEN, DE, DOHT, HANSRISTIAN., 91054 ERLANGEN, DE
• Format: Patent
• Language: English; German
• Published: 04.05.1995
• Edition: 6
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION; PULSE TECHNIQUE

The invention relates to a method and a device (38) for turning on a gate turn-off power semiconductor (T1, ..., T4), which is controlled by means of an electric field, of a resonant converter (6 to 14) which is operated in the zero voltage switch (ZVS) mode. According to the invention, a check is made, before an on control signal arrives, of whether the valve voltage (uDS) of the power semiconductor (T1, ..., T4) at approximately equal to zero, a changeover being made, in the event of a valve voltage (uDS) which is not approximately equal to zero, from a turn-on operation of the power semiconductor (T1, ..., T4) at a high switching speed to a turn-on operation at a matched switching speed. Consequently, the operation of the resonant converter (6 to 14) can be maintained even in the case of a load change or malfunction of the inductor (14), without in the process overloading the power semiconductors (T1, ..., T4) of the converter (10) in terms of voltage.