MOS semiconductor element e.g. for power MOSFET, IGBT, etc. - has semiconductor layer in whose surface, regions of opposite conductivity are selectively formed

In the surface region of the semiconductor layer (1) are formed numerous regions (4,41) of opposite conductivity, as well as numerous regions (5,51) of the semiconductor layer conductivity, formed in the first region surface. In the latter are formed channel regions (7,71) between the second region...

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Bibliographic Details
Main Author OBINATA, SHIGEYUKI
Format Patent
LanguageEnglish
German
Published 14.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In the surface region of the semiconductor layer (1) are formed numerous regions (4,41) of opposite conductivity, as well as numerous regions (5,51) of the semiconductor layer conductivity, formed in the first region surface. In the latter are formed channel regions (7,71) between the second region and the semiconductor layer. On a gate insulating film (8) is formed a gate electrode (9) over each channel region. A main source electrode (11) contacts the first ones (4,5) of both regions. The second regions (41,51) are contacted by an interrogation signal reception source electrode (12). To the two source electrodes is coupled a resistor. A third region (14) of second conductivity is spaced from the first regions and contacted by the main source electrode.
Bibliography:Application Number: DE19924245057