Halbleiterspeichervorrichtung

A semiconductor memory device is provided having a read out gate for detecting and providing to a main I/O line pair the potential difference of a sub-data input/output line pair, and a write gate for transferring data of the main I/O line pair to the sub-data input/output line pair in an energy reg...

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Bibliographic Details
Main Author FURUTANI, KIYOHIRO, ITAMI, HYOGO, JP
Format Patent
LanguageGerman
Published 09.03.1995
Edition5
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A semiconductor memory device is provided having a read out gate for detecting and providing to a main I/O line pair the potential difference of a sub-data input/output line pair, and a write gate for transferring data of the main I/O line pair to the sub-data input/output line pair in an energy region surrounded by a sense amplifier region and a word line coupling region. By providing the read out gate and the write gate in the empty region which was not conventionally used, the access operation can be carried out at high speed without increasing the chip area of the semiconductor memory device.
Bibliography:Application Number: DE19924244085